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ASM International and Tokyo Electron Sign Licensing Agreement for Atomic Layer Deposition Technology
BILTHOVEN, The Netherlands, December 19, 2008 - ASM International N.V. (Nasdaq: ASMI and Euronext Amsterdam: ASM) announced today that ASMI and Tokyo Electron Limited (Tokyo Stock Exchange - 1st Section: 8035) have signed a licensing agreement. According to this agreement, ASMI grants usage of its currently filed and issued Atomic Layer Deposition (ALD) patents to Tokyo Electron Limited (TEL) in the field of batch ALD. Detailed terms of the agreement were not disclosed.
A pioneer of ALD applications for the semiconductor industry, ASMI today owns an extensive patent portfolio in this discipline. ALD is an advanced technology that deposits one atomic layer at a time at low temperatures, creating ultra-thin films of exceptional quality.
Dr. Albert Hasper, general manager of ASM Europe stated, "By licensing global enterprises such as TEL with certain rights to our advanced ALD IP portfolio, we are further facilitating the adoption of this cost-effective, breakthrough technology to a broader marketplace, which will not only benefit our companies, but the semiconductor industry overall."
Mr. Hiroshi Takenaka, corporate director and senior vice president of Tokyo Electron commented, "TEL recognizes the industry migration to finer geometries where ALD technology plays a vital role, especially in the sub-32nm regime. The licensing of the ALD patents from ASMI will complement TEL's pursuit of enabling critical technologies in a batch reactor platform that also meets the high-productivity and cost-competitive metrics of our customers."